DocumentCode
2603522
Title
Remarkable Breakdown Voltage Enhancement in AlGaN Channel HEMTs
Author
Nanjo, Takuma ; Takeuchi, Misaichi ; Suita, Muneyoshi ; Abe, Yuji ; Oishi, Toshiyuki ; Tokuda, Yasunori ; Aoyagi, Yoshinobu
Author_Institution
Mitsubishi Electr. Corp., Amagasaki
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
397
Lastpage
400
Abstract
We demonstrated a remarkable breakdown voltage enhancement in a new high-electron-mobility transistor (HEMT) with a wider bandgap AlGaN channel layer. A Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The obtained maximum breakdown voltage was 1650 V with a gate-drain distance of 10 mum. This result is very promising for the further higher-power operation of high-frequency HEMTs.
Keywords
aluminium compounds; gallium compounds; high electron mobility transistors; ion implantation; wide band gap semiconductors; AlGaN; Si; breakdown voltage enhancement; ion implantation doping; resistive source-drain contacts; size 10 mum; voltage 1650 V; Aluminum gallium nitride; Chemical vapor deposition; Contact resistance; Doping; Gallium nitride; HEMTs; Ion implantation; MODFETs; Ohmic contacts; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4418956
Filename
4418956
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