Title :
Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates
Author :
Meneghesso, G. ; Ongaro, C. ; Zanoni, E. ; Brylinski, C. ; Forte-Poisson, M. A di ; Hoel, V. ; De Jaeger, J.C. ; Langer, R. ; Lahreche, H. ; Bove, P. ; Thorpe, J.
Author_Institution :
Univ. di Padova, Padova
Abstract :
This paper shows results obtained on AlGaN/GaN FJEMTs processed on epitaxy grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium compounds; high electron mobility transistors; microwave transistors; radiocommunication; wide band gap semiconductors; AlGaN-GaN; FJEMT; HEMT; composite substrate; epitaxial growth; high power microwave transistor; wireless communication system; Aluminum gallium nitride; Costs; Epitaxial growth; Fabrication; Gallium nitride; HEMTs; Microwave devices; Microwave transistors; Substrates; Wireless communication;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418957
