Title :
High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density
Author :
Wu, Y.-F. ; Moore, M. ; Abrahamsen, A. ; Jacob-Mitos, M. ; Parikh, P. ; Heikman, S. ; Burk, A.
Author_Institution :
Cree Santa Barbara Technol. Center, Goleta
Abstract :
Short-gate-length GaN HEMTs with advanced features including a field plate and an InGaN back-confinement barrier showed excellent I-V characteristics at high voltages. A 0.4-mm wide device with 0.15-mum gate and 0.25-mum field plate operated up to 60 V and achieved 13.7 W/mm power density at 30 GHz, the highest for a FET at millimeter-wave frequencies.
Keywords :
III-V semiconductors; gallium compounds; millimetre wave field effect transistors; power HEMT; wide band gap semiconductors; FET; GaN; InGaN; back-confinement barrier; high-voltage millimeter-wave HEMT; short-gate-length field-plated HEMT; size 0.15 mum; size 0.25 mum; size 0.4 mm; Frequency; Gallium nitride; Gold; HEMTs; Jacobian matrices; Lithography; MODFETs; Millimeter wave technology; Polarization; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418958
