Title :
High-frequency through-silicon Via (TSV) failure analysis
Author :
Kim, Joohee ; Cho, Jonghyun ; Pak, Jun So ; Kim, Joungho ; Yook, Jong-Min ; Kim, Jun Chul
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
Despite the many advantages of 3D ICs, the yield loss experienced during the 3D IC fabrication process limits the commercialization of 3D IC products. In this study, we propose a novel method for TSV failure analysis and analyze TSV failures electrically to detect failures and their locations in TSV-based 3D IC.
Keywords :
failure analysis; integrated circuit yield; three-dimensional integrated circuits; 3D IC fabrication process; 3D IC products commercialization; TSV failure analysis; TSV-based 3D IC; failure detection; failure locations; high-frequency through-silicon via failure analysis; yield loss; Analytical models; Failure analysis; Insulators; Silicon; Three dimensional displays; Through-silicon vias; failure analysis; integrated circuit (3D IC); three-dimensional; through-silicon via (TSV);
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2011 IEEE 20th Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-9398-2
Electronic_ISBN :
pending
DOI :
10.1109/EPEPS.2011.6100237
