Temperature-dependent through-silicon via (TSV) model and noise coupling

Author

Lee, Manho ; Cho, Jonghyun ; Kim, Joohee ; Pak, Jun So ; Kim, Joungho ; Lee, Hyungdong ; Lee, Junho ; Park, Kunwoo

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2011

fDate

23-26 Oct. 2011

Firstpage

247

Lastpage

250

Abstract

The effect of temperature variation on through silicon via (TSV) noise coupling is measured in this paper. The measurement result is analyzed using the temperature-dependent TSV lumped model and shows good correlation. Under the hundreds-of-MHz frequency range, increasing temperature reduces the noise suppression because the dielectric constant increases. However, over that frequency range, increasing temperature increases the noise suppression because the silicon substrate´s resistivity increases.

Keywords

coupled circuits; integrated circuit noise; three-dimensional integrated circuits; dielectric constant; frequency range; noise coupling; noise suppression; silicon substrate; temperature variation; temperature-dependent TSV lumped model; through silicon via; Conductivity; Couplings; Noise; Silicon; Temperature; Temperature measurement; Through-silicon vias; 3D-IC; TSV-TSV coupling; dielectric constant; silicon resistivity; temperature-dependent TSV model; through silicon via(TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging and Systems (EPEPS), 2011 IEEE 20th Conference on

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4244-9398-2

Electronic_ISBN

pending

Type

conf

DOI

10.1109/EPEPS.2011.6100238

Filename

6100238