• DocumentCode
    2603600
  • Title

    Single-Resonator Dual-Frequency Thin-Film Piezoelectric-on-Substrate Oscillator

  • Author

    Abdolvand, Reza ; Mirilavasani, Hossein ; Ayazi, Farrokh

  • Author_Institution
    Oklahoma State Univ., Oklahoma
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    419
  • Lastpage
    422
  • Abstract
    This paper reports on the design and implementation of a sub-milliwatt dual-frequency oscillator that utilizes two high-Q acoustic modes of an AIN-on-Si microresonator. While operating in atmospheric pressure, the microresonator shows Qunloaded of 7100 at 35.5 MHz, and 4000 at 105.7 MHz corresponding to the first- and the third-order width-extensional resonance modes. The measured Qunloaded is improved to 10100 in vacuum for the first-order resonance mode. The phase-noise of a two-transistor oscillator circuit using this resonator at 1 kHz offset from the carrier is -94 dBc/Hz and -88 dBc/Hz, for the low and high frequency modes, respectively, with a far from carrier noise of -143 dBc/Hz.
  • Keywords
    aluminium compounds; crystal oscillators; micromechanical resonators; phase noise; silicon; thin film circuits; AlN-Si; dual-frequency oscillator; frequency 105.7 MHz; frequency 35.5 MHz; high-Q acoustic modes; microresonator; phase-noise; resonance modes; single-resonator oscillator; thin-film piezoelectric-on-substrate oscillator; two-transistor oscillator circuit; Acoustic measurements; Atmospheric measurements; Circuit noise; Frequency; Microcavities; Oscillators; Phase noise; Piezoelectric films; Q measurement; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418962
  • Filename
    4418962