Title :
Continuous wave operation of 1.3 /spl mu/m vertical cavity InGaAsN quantum well lasers
Author :
Fischer, A.J. ; Klem, J.F. ; Choquette, K.D. ; Blum, O. ; Allerman, A.A. ; Fritz, I.J. ; Kurtz, S.R. ; Breiland, W.G. ; Sieg, R. ; Geib, K.M. ; Scott, J.W. ; Naone, R.L.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Vertical-cavity lasers emitting at 1.3 /spl mu/m are extremely attractive for high bandwidth fiber communications where it is advantageous to operate at the dispersion minimum of silica optical fiber. To date, VCSELs based on pseudomorphic GaAs materials have achieved lasing emission only slightly longer than 1.3 /spl mu/m. We report the first 1.3 /spl mu/m selectively oxidized VCSELs using InGaAsN quantum wells which operate at continuous wave at and above room temperature.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical transmitters; quantum well lasers; surface emitting lasers; 1.3 mum; 298 K; InGaAsN; InGaAsN quantum well lasers; InGaAsN quantum wells; VCSELs; continuous wave operation; dispersion minimum; high bandwidth fiber communications; lasing emission; pseudomorphic GaAs materials; room temperature; selectively oxidized VCSELs; silica optical fiber; vertical cavity quantum well lasers; vertical-cavity lasers; Apertures; Distributed Bragg reflectors; Gallium arsenide; Laboratories; Mirrors; Plasma temperature; Quantum well lasers; Stimulated emission; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882262
