A highly strained (/spl lambda/=1.12 /spl mu/m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization

Author

Nishiyama, N. ; Arai, M. ; Shinada, S. ; Miyamoto, T. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

11

Lastpage

12

Abstract

We have demonstrated a 1.12 /spl mu/m highly strained GaInAs/GaAs QWs VCSELs grown on a GaAs (311)B substrate. Those wells have the In content of 33% and 2.3% strain. The threshold current is 0.9 mA. These VCSELs also show large polarization stability with OPSR of 25 dB, we can expect these VCSELs can maintain a large OPSR under high-speed operation. We are elongating the wavelength toward 1.3 /spl mu/m and apply the device to high-speed silica-fiber based LANs.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; laser cavity resonators; laser stability; optical fabrication; optical fibre LAN; optical transmitters; quantum well lasers; surface emitting lasers; 0.9 mA; 1.12 mum; 1.3 mum; 298 K; GaAs; GaAs (311)B substrate; GaInAs-GaAs; GaInAs/GaAs VCSEL; In content; QWs VCSELs; high-speed operation; high-speed silica-fiber based LANs; highly strained lasers; polarization stability; stable polarization; threshold current; Capacitive sensors; Electrons; Gallium arsenide; High speed optical techniques; Optical polarization; Spectral analysis; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882264

Filename

882264