Title :
CMOS digitalized peak detector for a MEMS-based electrostatic field sensor
Author :
Cui, Guoping ; Yang, Haigang ; Xia, Shanhong
Author_Institution :
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Beijing
Abstract :
This paper presents a new CMOS peak detector that directly converts the peak of a sine wave signal to its digital representation. This peak detector is capable of capturing peak points that carry the information of the electrostatic field, simplifying the sample-and-hold requirement. By making use of the voltage to time conversion (or voltage to duty cycle conversion), the method boasts the advantage of high resolution compared with the conventional way of using AD converters. The circuit is fabricated in Chartered 0.35 um technology and is further tested.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; microsensors; voltage measurement; AD converters; CMOS peak detector; MEMS-based electrostatic field sensor; sample-and-hold requirement; sine wave signal; voltage time conversion; Circuit testing; Detectors; Electrostatics; Fault location; Logic; Low pass filters; Sensor phenomena and characterization; Signal processing; Signal resolution; Voltage; MEMS; Peak detector; Sensor; Voltage to time conversion;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601155