Title :
A 640 µW frequency synthesizer dedicated to implantable medical microsystems in 90-nm CMOS
Author :
Tanguay, Louis-François ; Savaria, Yvon ; Sawan, Mohamad
Author_Institution :
Electr. Eng. Dept., Ecole Polytech. de Montreal, Montreal, QC, Canada
Abstract :
This paper presents a 90-nm CMOS, ultra-low power frequency synthesizer dedicated to implantable smart medical devices. A new supply regulated LC-VCO that reduces the impact of process variations and temperature on current consumption and phase noise is proposed, as well as a new single-ended charge pump architecture that offers very high output impedance over a wide output voltage range. The frequency synthesizer operates in the 902-928 MHz Industrial, Scientific and Medical (ISM) band. It allows the selection of 7 channels 3.4 MHz in bandwidth and provides the differential, I/Q versions of the RF carrier. The measured power dissipation of the frequency synthesizer is 640 μW.
Keywords :
CMOS integrated circuits; frequency synthesizers; low-power electronics; micromechanical devices; prosthetics; voltage-controlled oscillators; CMOS; ISM band; Industrial, Scientific and Medical band; bandwidth 3.4 MHz; frequency 902 MHz to 928 MHz; implantable medical microsystems; implantable smart medical devices; power 640 muW; power dissipation; single-ended charge pump architecture; size 90 nm; supply regulated LC-VCO; ultra-low power frequency synthesizer; CMOS integrated circuits; Charge pumps; Frequency synthesizers; Iterative closest point algorithm; Synthesizers; Transistors; Voltage-controlled oscillators;
Conference_Titel :
NEWCAS Conference (NEWCAS), 2010 8th IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-6806-5
Electronic_ISBN :
978-1-4244-6804-1
DOI :
10.1109/NEWCAS.2010.5604005
