Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m

Author

Lott, J.A. ; Ledentsov, Nikolay N. ; Ustinov, V.M. ; Maleev, N.A. ; Zhukov, A.E. ; Maximov, M.V. ; Volovik, B.V. ; Alferov, Zh.I. ; Bimberg, D.

Author_Institution

Dept. of Electr. & Comput. Eng., US Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

13

Lastpage

14

Abstract

Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The dots lie within InGaAs quantum wells separated by GaAs barrier layers. The structures are grown on GaAs substrates and when fabricated include selectively oxidized AlO current apertures and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at 20/spl deg/C with threshold currents below 2 mA and differential slope efficiencies of 40%.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.3 mum; 2 mA; 20 C; 40 percent; AlO/GaAs distributed Bragg reflectors; GaAs; GaAs barrier layers; GaAs substrates; InAs quantum dot active layers; InAs-InGaAs; InAs-InGaAs quantum dot active region; InGaAs quantum wells; differential slope efficiencies; exciton ground state; fabrication; pulsed laser; pulsed lasing; selectively oxidized AlO current apertures; threshold currents; uncoupled sheets; vertical cavity surface emitting lasers; Apertures; Excitons; Gallium arsenide; Indium gallium arsenide; Optical pulses; Quantum dot lasers; Quantum well lasers; Stationary state; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882265

Filename

882265