Nanowire electromechanical logic switch

Author

Li, Qiliang ; Richter, Curt A. ; Xiong, Hao D. ; Suehle, John S.

Author_Institution

Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

141

Lastpage

145

Abstract

We present the integration and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, high on/off current ratio, small subthreshold slope and low switching energy compared to current Si CMOS make the switches very attractive for logic device application. In addition, we have developed a physical model to simulate the switching characteristics and extract the material properties.

Keywords

chemical vapour deposition; elemental semiconductors; logic devices; microswitches; nanotechnology; nanowires; semiconductor quantum wires; silicon; Si; Si CMOS; chemical-vapor-deposition; electromechanical force; logic device application; metal electrodes; nanowire electromechanical logic switch; silicon nanowires; Chemicals; Electrodes; FETs; Logic devices; Mechanical factors; NIST; Nanoelectromechanical systems; Nanoscale devices; Silicon; Switches; Electromechanical Switch; Silicon Nanowire; Subthreshold Slope; Transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601157

Filename

4601157