Title :
Nanowire electromechanical logic switch
Author :
Li, Qiliang ; Richter, Curt A. ; Xiong, Hao D. ; Suehle, John S.
Author_Institution :
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD
Abstract :
We present the integration and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, high on/off current ratio, small subthreshold slope and low switching energy compared to current Si CMOS make the switches very attractive for logic device application. In addition, we have developed a physical model to simulate the switching characteristics and extract the material properties.
Keywords :
chemical vapour deposition; elemental semiconductors; logic devices; microswitches; nanotechnology; nanowires; semiconductor quantum wires; silicon; Si; Si CMOS; chemical-vapor-deposition; electromechanical force; logic device application; metal electrodes; nanowire electromechanical logic switch; silicon nanowires; Chemicals; Electrodes; FETs; Logic devices; Mechanical factors; NIST; Nanoelectromechanical systems; Nanoscale devices; Silicon; Switches; Electromechanical Switch; Silicon Nanowire; Subthreshold Slope; Transistor;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601157
