Title :
Quantum well nanomechanical actuators with atomic vertical resolution
Author :
Makowski, Jan D. ; Talghader, Joseph J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN
Abstract :
A novel continuously tunable vertical actuator with sub-nanometer resolution is presented. It consists of a heterostructure cantilever which has collapsed over a 125 nm thick nanogap. Its operating principle relies on the temperature dependence of the adhesion energy between two InGaAs surface quantum well surfaces. Deflections from -17 nm to 5 nm with a precision better than three atomic layers have been measured.
Keywords :
III-V semiconductors; adhesion; cantilevers; gallium arsenide; indium compounds; microactuators; quantum well devices; semiconductor quantum wells; InGaAs; adhesion energy; atomic vertical resolution; heterostructure cantilever; quantum well nanomechanical actuators; surface quantum well surfaces; thick nanogap; tunable vertical actuator; Actuators; DH-HEMTs; Nanotechnology; microactuator; microcantilever; semiconductor heterostructure; surface forces;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601158
