Title :
COD-free high power (760 mW) 980 nm laser diodes with current-blocking facets
Author :
Igarashi, T. ; Fukagai, K. ; Chida, H. ; Miyazaki, T. ; Horie, M. ; Ishikawa, S. ; Torikai, T.
Author_Institution :
Syst. Devices & Fundamental Res., NEC Corp., Tsukuba, Japan
Abstract :
A buried ridge 980 nm InGaAs-GaAs double QW laser diode (LD) with current-blocking facets has demonstrated catastrophic optical damage (COD)-free maximum output power of 760 mW and linear power over 500 mW. The LDs show the same light output characteristics even after 1600 hours aging at 300 mW and 50/spl deg/C.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; laser transitions; optical testing; quantum well lasers; ridge waveguides; semiconductor device testing; waveguide lasers; 1600 h; 300 mW; 50 C; 500 mW; 760 mW; 980 nm; COD-free high power 980 nm laser diodes; InGaAs-GaAs; aging; buried ridge 980 nm InGaAs-GaAs double QW laser diode; catastrophic optical damage; current-blocking facets; light output characteristics; linear power; maximum output power; Accelerated aging; Bit rate; Diode lasers; Explosives; Internet; National electric code; Optical devices; Optical pumping; Power generation; Wavelength division multiplexing;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882271
