DocumentCode :
2603876
Title :
Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies
Author :
Takeuchi, K. ; Fukai, T. ; Tsunomura, T. ; Putra, A.T. ; Nishida, A. ; Kamohara, S. ; Hiramoto, T.
Author_Institution :
MIRAI-Selete, Ibaraki
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
467
Lastpage :
470
Abstract :
Random threshold voltage (VM) fluctuation data obtained from multiple fabs, generations and technologies, as well as theoretical / TCAD results are carefully compared using a special normalization method. It is revealed that P-FET fluctuation can be almost fully accounted for by dopant fluctuation regardless of device generations and designs, whereas extra fluctuation mechanism(s) significantly contributes to N-FETs.
Keywords :
MOSFET; fluctuations; technology CAD (electronics); MOSFET; P-FET fluctuation; dopant fluctuation; random threshold voltage fluctuation; techonology CAD; Data handling; Data mining; Dielectric devices; Differential equations; Fluctuations; Modems; National electric code; Semiconductor process modeling; Size measurement; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4418975
Filename :
4418975
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2603876
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