Title :
Schottky barrier engineering in carbon nanotube with various metal electrodes
Author :
Perello, David ; Kim, Moon.J. ; Cha, DongKyu ; Han, Gang Hee ; Bae, Dong Jae ; Jeong, Seung Yol ; Lee, Young Hee ; Yun, Minhee
Author_Institution :
Dept. of Electr. & Comput. Eng., Pittsburgh Univ., Pittsburgh, PA
Abstract :
We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (~11 micron) SWCNT. Large contact resistances around four MOmega were observed at room temperature. Low temperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25-41 meV barriers for the devices.
Keywords :
Poole-Frenkel effect; Schottky barriers; carbon nanotubes; contact resistance; field effect transistors; nanotube devices; semiconductor nanotubes; Poole-Frenkel model; Schottky barrier engineering; Schottky contact; carbon nanotube field effect transistors; contact resistances; drain contacts; metal electrodes; source contacts; CNTFETs; Carbon nanotubes; Electrodes; FETs; Hydrogen; Optical scattering; Schottky barriers; Semiconductivity; Temperature; USA Councils; Carbon Nanotubes; Nano architecture; Nanufacturing;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601168
