Title :
MOS/LSI Failure Analysis Techniques
Author_Institution :
Texas Instruments Incorporated, P. O. Box 1443 M/S 602, Houston, Texas 77001
Abstract :
With the rapid evolution of the functional complexity of MOS/LSI circuits, the task of detailed failure analysis has become increasingly complex. The failure analysis diagnostic techniques and laboratory procedures developed for the analysis of MOS/LSI circuits will be discussed and illustrated. These analysis techniques, emphasizing the use of computerized test equipment, were found to reduce significantly the laboratory cycle time and increase the level of understanding of MOS/LSI failure mechanisms.
Keywords :
Circuit analysis; Circuit testing; Dielectric substrates; Failure analysis; Laboratories; Large scale integration; Liquid crystals; Optical devices; Optical sensors; Test equipment;
Conference_Titel :
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1973.362583