A parametric study of line defects in synthetic quartz crystal

Author

Nagai, K. ; Hamaguchi, K. ; Kita, K. ; Asahara, J.

Author_Institution

Toyo Commun. Equipment Co. Ltd., Kanagawa, Japan

fYear

1997

fDate

28-30 May 1997

Firstpage

519

Lastpage

526

Abstract

A systematic and parametric study on line defects in synthetic quartz crystal and its culturing condition is needed to cope with the trend for the fabrication of quartz crystal resonator using chemical processing, since any of the etch channels are supposed to be originating from the line defects. It is reported in this paper that there are two kinds of line defects, and that numbers of those extending to the peak of cobbles almost correspond to those of the etch channels. Also, it is shown that the way of treating the seed crystal as well as the selection of alkali solution for culturing has a big impact on the formation of line defects

Keywords

crystal resonators; etching; quartz; vacancies (crystal); SiO₂; alkali solution; chemical processing; culturing condition; etch channels; line defects; quartz crystal resonator; seed crystal; synthetic quartz crystal; Chemical analysis; Chemical processes; Chemical products; Communication equipment; Etching; Facsimile; Frequency; IEC standards; Parametric study; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1997., Proceedings of the 1997 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-3728-X

Type

conf

DOI

10.1109/FREQ.1997.638653

Filename

638653