DocumentCode
2604015
Title
High single-mode yield 1.55 /spl mu/m GaInAsP/InP BH-DFB lasers with periodic wirelike active regions
Author
Nunoya, N. ; Morshed, M. ; Nakamura, M. ; Tamura, S. ; Arai, S.
Author_Institution
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fYear
2000
fDate
25-28 Sept. 2000
Firstpage
45
Lastpage
46
Abstract
We demonstrated low threshold current and stable single-mode operation of 1.55 μm wavelength GaInAsP-InP BH-DFB lasers with periodic wirelike active regions by adopting a gain-matching effect in strongly index-coupled structure.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser stability; laser transitions; semiconductor lasers; 1.55 mum; GaInAsP-InP; GaInAsP-InP BH-DFB lasers; gain-matching effect; high single-mode yield; low threshold current; periodic wirelike active regions; stable single-mode operation; strongly index-coupled structure; Current measurement; Electrons; Etching; Geometrical optics; Indium phosphide; Laser modes; Optical reflection; Quantum well devices; Resonance; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-6259-4
Type
conf
DOI
10.1109/ISLC.2000.882280
Filename
882280
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