Title :
High single-mode yield 1.55 /spl mu/m GaInAsP/InP BH-DFB lasers with periodic wirelike active regions
Author :
Nunoya, N. ; Morshed, M. ; Nakamura, M. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
We demonstrated low threshold current and stable single-mode operation of 1.55 μm wavelength GaInAsP-InP BH-DFB lasers with periodic wirelike active regions by adopting a gain-matching effect in strongly index-coupled structure.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser stability; laser transitions; semiconductor lasers; 1.55 mum; GaInAsP-InP; GaInAsP-InP BH-DFB lasers; gain-matching effect; high single-mode yield; low threshold current; periodic wirelike active regions; stable single-mode operation; strongly index-coupled structure; Current measurement; Electrons; Etching; Geometrical optics; Indium phosphide; Laser modes; Optical reflection; Quantum well devices; Resonance; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882280
