DocumentCode :
2604039
Title :
Spin-polarized thermionic emission at the interface of ferromagnetic metal and organic semiconductor
Author :
Zhang, Lei ; Dong, Hao ; Deng, Ning ; Ren, Min ; Hu, Jiu-Ning ; Chen, Pei-Yi
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
fYear :
2007
fDate :
2-5 Aug. 2007
Firstpage :
220
Lastpage :
223
Abstract :
We present a model to explain the spin-polarized injection from ferromagnetic metal into organic semiconductor. Thermionic emission mechanism is considered as the dominant transport mechanism at the interface at low bias. Boundary condition is determined from the relationship of the spin-dependent quasi-electrochemical potentials across the interface. The dependences of the current spin polarization on the control parameters, which include the Schottky barrier height at the interface, the spontaneous spin polarization in ferromagnetic metal, and the bias, are demonstrated.
Keywords :
Schottky barriers; ferromagnetic materials; metals; organic semiconductors; semiconductor-metal boundaries; spin polarised transport; thermionic emission; Schottky barrier height; ferromagnetic metal; organic semiconductor; quasielectrochemical potentials; spin-polarized injection; spin-polarized thermionic emission; thermionic emission; Boundary conditions; Giant magnetoresistance; Magnetoelectronics; Microelectronics; Nanotechnology; Organic semiconductors; Polarization; Schottky barriers; Thermionic emission; Tunneling magnetoresistance; ferromagnetic metal; organic semiconductor; spin-polarized; thermionic emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
Type :
conf
DOI :
10.1109/NANO.2007.4601175
Filename :
4601175
Link To Document :
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