Title :
TDDB Reliability Prediction Based on the Statistical Analysis of Hard Breakdown Including Multiple Soft Breakdown and Wear-out
Author :
Sahhaf, S. ; Degraeve, R. ; Roussel, Ph J. ; Kauerauf, T. ; Kaczer, B. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven
Abstract :
We study time-dependent dielectric breakdown (TDDB) in thin gate oxide and demonstrate how soft breakdown (SBD) and wear-out (WO) parameters can be extracted from measuring the time-to-hard breakdown (tHBD) only. This requires that the competition of multiple SBD´s is correctly taken into account. We show that the shape of the HBD distribution can change with voltage and area depending on the ratio of WO and SBD times and construct a complete reliability prediction model that includes SBD and WO.
Keywords :
dielectric materials; electric breakdown; reliability; statistical analysis; TDDB reliability prediction; hard breakdown; multiple soft breakdown; statistical analysis; thin gate oxide dielectric; time-dependent dielectric breakdown; wear-out parameters; Convolution; Degradation; Dielectric breakdown; Dielectric measurements; Electric breakdown; Least squares methods; Predictive models; Shape; Statistical analysis; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418984
