Title :
Room-Temperature Threshold-Voltage Instabilities in an MOS Integrated Circuit
Author_Institution :
Post Office Telecommunications Headquarters, Research Department, Dollis Hill, London NW2 7DT, ENGLAND
Keywords :
Circuit testing; Current measurement; Dielectrics; Integrated circuit measurements; Integrated circuit reliability; MOS integrated circuits; Stress measurement; Temperature; Threshold voltage; Voltage control;
Conference_Titel :
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1973.362590
