• DocumentCode
    2604058
  • Title

    An SNM estimation and optimization model for ULP sub-45nm CMOS SRAM in the presence of variability

  • Author

    Makosiej, Adam ; Vladimirescu, Andrei ; Thomas, Olivier ; Amara, Amara

  • Author_Institution
    Inst. Super. d ´´Electron. de Paris, Paris, France
  • fYear
    2010
  • fDate
    20-23 June 2010
  • Firstpage
    337
  • Lastpage
    340
  • Abstract
    This paper presents a universal optimization model for Static Noise Margin (SNM) of Ultra Low Power (ULP) CMOS SRAMs in the presence of statistical variations. Distributions of retention and read SNM derived analytically, are analyzed as a function of the threshold voltages of the N and PMOS devices. The proposed model implemented in Matlab is applied to optimize yield by maximizing the μ/6σ of SNM in the presence of local statistical VT variation of 3σ.
  • Keywords
    CMOS integrated circuits; SRAM chips; optimisation; NMOS devices; PMOS devices; SNM estimation; optimization model; static noise margin; ultra low power CMOS SRAM; Equations; Inverters; MOS devices; Mathematical model; Random access memory; Semiconductor device modeling; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    NEWCAS Conference (NEWCAS), 2010 8th IEEE International
  • Conference_Location
    Montreal, QC
  • Print_ISBN
    978-1-4244-6806-5
  • Electronic_ISBN
    978-1-4244-6804-1
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2010.5604021
  • Filename
    5604021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2604058