Title :
Effects of Mechanical Stress on the Electrical Behavior of MOS Devices
Author :
Wonsiewicz, B.C. ; McCaughan, D.V.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey 07974
Keywords :
Compressive stress; Interface states; MOS capacitors; MOS devices; Metallization; Silicon; Temperature; Tensile stress; Thermal stresses; Tungsten;
Conference_Titel :
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1973.362591
