DocumentCode :
2604083
Title :
Failure Analysis Applications of the Scanning Electron Microscope
Author :
Gonzales, Anthony J.
Author_Institution :
Motorola, Inc., Materials Research Laboratory, 5005 E. McDowell Road, Phoenix, Arizona 85008
fYear :
1973
fDate :
26755
Firstpage :
179
Lastpage :
184
Abstract :
The basic operation, advantages, and limitations of the scanning electron microscope are discussed. In applications the high magnification and large depth of field capabilities of the SEM are shown to aid in evaluating surface features such as metallization and wire bonds. Examples of both dynamic and static voltage contrast displays illustrate the localization of defects in integrated circuits. The electron beam induced current mode is used to detect sub-surface defects in discrete devices.
Keywords :
Detectors; Electron beams; Electron emission; Failure analysis; Focusing; Instruments; Lenses; Scanning electron microscopy; TV; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1973.362592
Filename :
4207967
Link To Document :
بازگشت