DocumentCode
2604083
Title
Failure Analysis Applications of the Scanning Electron Microscope
Author
Gonzales, Anthony J.
Author_Institution
Motorola, Inc., Materials Research Laboratory, 5005 E. McDowell Road, Phoenix, Arizona 85008
fYear
1973
fDate
26755
Firstpage
179
Lastpage
184
Abstract
The basic operation, advantages, and limitations of the scanning electron microscope are discussed. In applications the high magnification and large depth of field capabilities of the SEM are shown to aid in evaluating surface features such as metallization and wire bonds. Examples of both dynamic and static voltage contrast displays illustrate the localization of defects in integrated circuits. The electron beam induced current mode is used to detect sub-surface defects in discrete devices.
Keywords
Detectors; Electron beams; Electron emission; Failure analysis; Focusing; Instruments; Lenses; Scanning electron microscopy; TV; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1973.362592
Filename
4207967
Link To Document