• DocumentCode
    2604083
  • Title

    Failure Analysis Applications of the Scanning Electron Microscope

  • Author

    Gonzales, Anthony J.

  • Author_Institution
    Motorola, Inc., Materials Research Laboratory, 5005 E. McDowell Road, Phoenix, Arizona 85008
  • fYear
    1973
  • fDate
    26755
  • Firstpage
    179
  • Lastpage
    184
  • Abstract
    The basic operation, advantages, and limitations of the scanning electron microscope are discussed. In applications the high magnification and large depth of field capabilities of the SEM are shown to aid in evaluating surface features such as metallization and wire bonds. Examples of both dynamic and static voltage contrast displays illustrate the localization of defects in integrated circuits. The electron beam induced current mode is used to detect sub-surface defects in discrete devices.
  • Keywords
    Detectors; Electron beams; Electron emission; Failure analysis; Focusing; Instruments; Lenses; Scanning electron microscopy; TV; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1973. 11th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1973.362592
  • Filename
    4207967