Title :
2-D phased-locked antiguided vertical cavity surface emitting laser arrays
Author :
Zhou, D. ; Mawst, L.J.
Author_Institution :
Wisconsin Univ., Madison, WI, USA
Abstract :
We demonstrate that 2D (4x4) VCSEL arrays can be designed to operate in a stable in-phase mode in good agreement with theory. Calculations show resonant couplings for the in-phase (out-of-phase) mode occurs when the inter-element spacing corresponds to an odd (even) integral number of half-waves of the antiguide. It consists of 27.5 pairs of AlAs-GaAs n-DBR, 23 pairs of AlGaAs-GaAs p-DBR and an optical cavity which includes 3-InGaAs quantum wells, GaAs barrier layers, and AlGaAs confinement layers for 980nm emission.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; infrared sources; laser mode locking; laser modes; laser stability; laser transitions; quantum well lasers; semiconductor laser arrays; surface emitting lasers; waveguide lasers; 2-D phased-locked antiguided vertical cavity surface emitting laser arrays; 2D 4x4 VCSEL arrays; 980 nm; AlAs-GaAs; AlGaAs; AlGaAs confinement layers; AlGaAs-GaAs; AlGaAs-GaAs DBR laser; InGaAs; InGaAs quantum wells; barrier layers; in-phase out-of-phase mode; inter-element spacing; odd even integral number; optical cavity; resonant couplings; stable in-phase mode; Gallium arsenide; Optical arrays; Optical pumping; Phased arrays; Power engineering and energy; Power generation; Resonance; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882288
