Title :
Mid-IR type-I and type-II quantum cascade lasers
Author :
Hwang, W.-Y. ; Chih-Hsiang Lin ; Zaitsev, S.V. ; Um, Jaegwang ; Hong-Wen Ren
Author_Institution :
Appl. Optoelectron. Inc., Sugar Land, TX, USA
Abstract :
In the past three years, we have been optimizing an alternative cascade configuration based on interband transitions in type-II InAs/InGaSb/AlSb quantum wells (QWs). We have achieved an internal quantum efficiency (IQE) of 580% and a CW output power of 53 mW were achieved at 80 K at 4.4 /spl mu/m. The maximum operation temperature for a 4.2 /spl mu/m type-II IC laser was 220 K with a T/sub 0/ of 285 K around 100 K. A 25-stage interband cascade (IC) laser with a W active region and a third hole quantum well for the suppression of leakage current has exhibited lasing up to 286 K at 3.5 /spl mu/m. We report our most recent results of type-II IC lasers. We also grew 4.6 and a 7.4 /spl mu/m type-I QC laser structures.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser transitions; quantum well lasers; 100 K; 220 K; 285 K; 286 K; 3.5 mum; 4.2 mum; 4.4 mum; 4.6 mum; 53 mW; 580 percent; 7.4 mum; 80 K; CW output power; InAs-InGaSb-AlSb; InAs/InGaSb/AlSb quantum wells; W active region; cascade configuration; interband cascade laser; interband transitions; internal quantum efficiency; lasing; leakage current; leakage current suppression; maximum operation temperature; mid-IR type-I quantum cascade lasers; mid-IR type-II quantum cascade lasers; third hole quantum well; type-I quantum cascade laser structures; type-II interband cascade laser; type-II quantum well; Chemical lasers; Gas lasers; Laser modes; Laser transitions; Power generation; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882292
