Title :
A Unified Compact Model of the Gate Oxide Reliability for Complete Circuit Level Analysis
Author :
Lee, Chi-Hwan ; Yang, Gi-Young ; Park, Jin-Kyu ; Park, Young-Kwan ; Kim, Hyung-Wook ; Park, Donggun ; Yoo, Moon-Hyun
Author_Institution :
Saumsung Electron. Co. Ltd., Hwasung-City
Abstract :
A unified compact model to predict the performance degradation of a circuit due to the electrical gate oxide stress is developed and verified by experimental results. Hot carrier injection (HCI), off-state (OS), and Fowler-Nordheim (FN) degradations can be described by a single formula which models the trap generation over the stress time and voltage. With the proposed model, the propagation delay (tPD) degradation of a ring oscillator is reproduced with the accuracy of more than 90%. It is found that OS plays major role in the tPD degradation rather than HCI, while the component ratio of HCI is getting larger as the frequency increases.
Keywords :
MOSFET; semiconductor device models; semiconductor device reliability; Fowler-Nordheim degradation; complete circuit level analysis; electrical gate oxide stress; gate oxide reliability; hot carrier injection; off-state degradation; propagation delay degradation; ring oscillator; trap generation; unified compact model; Circuit analysis; Degradation; Frequency; Hot carrier injection; Human computer interaction; Predictive models; Propagation delay; Ring oscillators; Stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418997
