Title :
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions
Author :
Reggiani, Susanna ; Silvestri, Luca ; Cacciatori, Alessio ; Gnani, Elena ; Gnudi, Antonio ; Baccarani, Giorgio
Author_Institution :
Univ. of Bologna, Bologna
Abstract :
A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO2/HfO2 gate stacks, and silicon under biaxial or uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model.
Keywords :
MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; semiconductor device models; silicon; silicon compounds; stress effects; MOSFET; SiO2-HfO2; biaxial/uniaxial stress condition; low-field carrier mobility; ultrathin high-k gate stacks; unified compact model; Automation; Electron mobility; Hafnium oxide; Light scattering; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon; Stress; Tin;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418999
