A new model for 1/f noise in high-κ MOSFETs

Author

Morshed, Tanvir ; Devireddy, Siva Prasad ; Rahman, M. Shahriar ; Çelik-Butler, Zeynep ; Tseng, Hsing-Huang ; Zlotnicka, Ania ; Shanware, Ajit ; Green, Keith ; Chambers, J.J. ; Visokay, M.R. ; Quevedo-Lopez, M.A. ; Colombo, Luigi

Author_Institution

Univ. of Texas at Arlington, Arlington

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

561

Lastpage

564

Abstract

A new 1/f noise model based on correlated number-mobility fluctuations theory is proposed to account for the low frequency noise in MOSFETs with multi-layered gate dielectrics. In this new model, the trap density profile takes into account the effects of energy and spatial distribution as well as the multilayer structure of the gate-stack. Correlated number and mobility fluctuation was experimentally verified as the dominant mechanism for 1/f noise, with no contribution from remote phonon scattering to the observed fluctuations. The model was experimentally verified on devices having different interfacial layer (IL) thicknesses and various fabrication processes over a wide temperature and bias range.

Keywords

MOSFET; fluctuations; 1/f noise; correlated number-mobility fluctuations theory; gate dielectrics; high-MOSFET; interfacial layer; remote phonon scattering; Acoustical engineering; Electron traps; Fluctuations; High K dielectric materials; High-K gate dielectrics; Low-frequency noise; MOSFETs; Nonhomogeneous media; Semiconductor device noise; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419000

Filename

4419000