Title :
A new model for 1/f noise in high-κ MOSFETs
Author :
Morshed, Tanvir ; Devireddy, Siva Prasad ; Rahman, M. Shahriar ; Çelik-Butler, Zeynep ; Tseng, Hsing-Huang ; Zlotnicka, Ania ; Shanware, Ajit ; Green, Keith ; Chambers, J.J. ; Visokay, M.R. ; Quevedo-Lopez, M.A. ; Colombo, Luigi
Author_Institution :
Univ. of Texas at Arlington, Arlington
Abstract :
A new 1/f noise model based on correlated number-mobility fluctuations theory is proposed to account for the low frequency noise in MOSFETs with multi-layered gate dielectrics. In this new model, the trap density profile takes into account the effects of energy and spatial distribution as well as the multilayer structure of the gate-stack. Correlated number and mobility fluctuation was experimentally verified as the dominant mechanism for 1/f noise, with no contribution from remote phonon scattering to the observed fluctuations. The model was experimentally verified on devices having different interfacial layer (IL) thicknesses and various fabrication processes over a wide temperature and bias range.
Keywords :
MOSFET; fluctuations; 1/f noise; correlated number-mobility fluctuations theory; gate dielectrics; high-MOSFET; interfacial layer; remote phonon scattering; Acoustical engineering; Electron traps; Fluctuations; High K dielectric materials; High-K gate dielectrics; Low-frequency noise; MOSFETs; Nonhomogeneous media; Semiconductor device noise; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419000
