Reduced spectral linewidth in high output power DFB lasers

Author

Inaba, Y. ; Kito, M. ; Takizawa, T. ; Nakayama, H. ; Ishino, M. ; Itoh, K.

Author_Institution

Semicond. Dev. Res. Center, Matsushita Electron. Corp., Osaka, Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

85

Lastpage

86

Abstract

The effect of threshold carrier density on the spectral linewidth in DFB lasers with high output power has been studied. A narrow spectral-linewidth of 0.3 MHz and the record output power of 180 mW are achieved in 1.55 /spl mu/m DFB lasers with reduced threshold carrier density.

Keywords

III-V semiconductors; carrier density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; laser modes; optical fabrication; quantum well lasers; 0.3 MHz; 1.55 mum; 180 mW; DFB lasers; InGaAsP; high output power DFB lasers; narrow spectral-linewidth; output power; reduced spectral linewidth; reduced threshold carrier density; spectral linewidth; threshold carrier density; Charge carrier density; Distributed feedback devices; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser feedback; Laser noise; Power amplifiers; Power generation; Power lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882300

Filename

882300