DocumentCode
2604379
Title
Failure Model for Electromigration
Author
Sigsbee, R.A.
Author_Institution
General Electric Corporate Research and Development, Schenectady, New York 12301
fYear
1973
fDate
26755
Firstpage
301
Lastpage
305
Abstract
A model is presented for electromigration induced failure following the nucleation of grain boundary voids which lengthen by electromigration transport along neighboring grain boundaries. A grain boundary crevasse growing parallel to the electron currentflow does not accelerate failure. However, a crevasse growing perpendicular to the current has three effects: the electron flux near the crack decreases, and the electron flux and stripe temperature increase near the tip, enhancing the tip growth rate. A consideration of these effects yields a stripe lifetime integral which fits the simple form Pn = 1/2(1+.265¿¿T0), where ¿=¿H/kT2 is the temperature coefficient of the diffusion constant and ¿T0 is the initial stripe temperature rise. Pulsed d. c. operation causes thermal effects that allow extended lifetimes. Lifetimes are proportional to the reciprocal of the duty cycle for long pulse times. Short pulse times and high repetition rates result in lower average stripe temperatures and allow even longer lifetimes.
Keywords
Acceleration; Aluminum; Conducting materials; Conductive films; Electromigration; Electrons; Grain boundaries; Research and development; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1973.362611
Filename
4207986
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