• DocumentCode
    2604379
  • Title

    Failure Model for Electromigration

  • Author

    Sigsbee, R.A.

  • Author_Institution
    General Electric Corporate Research and Development, Schenectady, New York 12301
  • fYear
    1973
  • fDate
    26755
  • Firstpage
    301
  • Lastpage
    305
  • Abstract
    A model is presented for electromigration induced failure following the nucleation of grain boundary voids which lengthen by electromigration transport along neighboring grain boundaries. A grain boundary crevasse growing parallel to the electron currentflow does not accelerate failure. However, a crevasse growing perpendicular to the current has three effects: the electron flux near the crack decreases, and the electron flux and stripe temperature increase near the tip, enhancing the tip growth rate. A consideration of these effects yields a stripe lifetime integral which fits the simple form Pn = 1/2(1+.265¿¿T0), where ¿=¿H/kT2 is the temperature coefficient of the diffusion constant and ¿T0 is the initial stripe temperature rise. Pulsed d. c. operation causes thermal effects that allow extended lifetimes. Lifetimes are proportional to the reciprocal of the duty cycle for long pulse times. Short pulse times and high repetition rates result in lower average stripe temperatures and allow even longer lifetimes.
  • Keywords
    Acceleration; Aluminum; Conducting materials; Conductive films; Electromigration; Electrons; Grain boundaries; Research and development; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1973. 11th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1973.362611
  • Filename
    4207986