DocumentCode :
2604379
Title :
Failure Model for Electromigration
Author :
Sigsbee, R.A.
Author_Institution :
General Electric Corporate Research and Development, Schenectady, New York 12301
fYear :
1973
fDate :
26755
Firstpage :
301
Lastpage :
305
Abstract :
A model is presented for electromigration induced failure following the nucleation of grain boundary voids which lengthen by electromigration transport along neighboring grain boundaries. A grain boundary crevasse growing parallel to the electron currentflow does not accelerate failure. However, a crevasse growing perpendicular to the current has three effects: the electron flux near the crack decreases, and the electron flux and stripe temperature increase near the tip, enhancing the tip growth rate. A consideration of these effects yields a stripe lifetime integral which fits the simple form Pn = 1/2(1+.265¿¿T0), where ¿=¿H/kT2 is the temperature coefficient of the diffusion constant and ¿T0 is the initial stripe temperature rise. Pulsed d. c. operation causes thermal effects that allow extended lifetimes. Lifetimes are proportional to the reciprocal of the duty cycle for long pulse times. Short pulse times and high repetition rates result in lower average stripe temperatures and allow even longer lifetimes.
Keywords :
Acceleration; Aluminum; Conducting materials; Conductive films; Electromigration; Electrons; Grain boundaries; Research and development; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1973.362611
Filename :
4207986
Link To Document :
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