Title :
New Approach for Passivation of Ga2O3-In2O3-ZnO Thin Film Transistors
Author :
Kim, Sun Il ; Kim, Chang Jung ; Park, Jae Chul ; Song, Ihun ; Kang, Dong Hun ; Lim, Hyuck ; Kim, Sang Wook ; Lee, Eunha ; Lee, Jae Chul ; Park, Youngsoo
Author_Institution :
Samsung Adv. Inst. of Technol., Yongin
Abstract :
We successfully integrate the Ga2O3-In2O3-ZnO (GIZO) thin film transistors (TFTs) under conventional dry etching and passivation process using a novel capping layer. The passivated TFT shows a superior stability performance which has the threshold voltage shift of less than 0.6 V at 3 uA and 60degC in 100 hours. This is very promising results for applications in driving TFT for large area active matrix OLED display.
Keywords :
II-VI semiconductors; LED displays; etching; gallium compounds; indium compounds; organic light emitting diodes; passivation; thin film transistors; zinc compounds; Ga2O3-In2O3-ZnO; active matrix OLED display; capping layer; dry etching; passivation process; stability performance; temperature 60 C; thin film transistors; time 100 h; Argon; Dry etching; Flat panel displays; Passivation; Plasma applications; Plasma measurements; Plasma properties; Plasma stability; Plasma temperature; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419006
