Numerical simulations of new high-power, high-brightness diode laser structures

Author

Boucke, K.

Author_Institution

Fraunhofer-Inst. fur Lasertechnik, Aachen, Germany

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

99

Lastpage

100

Abstract

The diode laser simulation is based on a Fox and Li type resonator calculation taking into account the nonlinear semiconductor medium between rear and front facette of the diode laser. The tracing of the time evolution of the optical field is replaced by an iterative approximation of the steady state of the system. The fundamental equations of the numerical model are the Helmholtz equation for the electrical field distribution and the carrier diffusion equation, coupled by the complex index of refraction and the nonlinear gain function.

Keywords

brightness; laser cavity resonators; laser theory; semiconductor device models; semiconductor lasers; Fox and Li type resonator calculation; Helmholtz equation; carrier diffusion equation; complex index of refraction; diode laser simulation; ectrical field distribution; fundamental equations; high-power high-brightness diode laser structures; nonlinear gain function; nonlinear semiconductor medium; numerical model; numerical simulations; optical field; time evolution; tracing; Couplings; Diode lasers; Nonlinear equations; Nonlinear optics; Numerical models; Numerical simulation; Optical refraction; Optical resonators; Semiconductor diodes; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882308

Filename

882308