DocumentCode :
2604466
Title :
Sub-Micron CMOS / MOS-Bipolar Hybrid TFTs for System Displays
Author :
Kawachi, G. ; Okada, T. ; Tsuboi, S. ; Mitani, M.
Author_Institution :
Adv. LCD Technol. Dev. Center Co., Ltd, Yokohama
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
591
Lastpage :
594
Abstract :
The characteristics of sub-micron CMOS- and MOS-bipolar hybrid TFTs fabricated on large-grain poly-Si films are presented. The MOS and hybrid TFTs with 0.5 mum-gate or base length exhibit an fmax of 10 and 5.5 GHz respectively, showing great potential for the integration of analog functions, such as the LVDS front-end interface.
Keywords :
CMOS integrated circuits; MOSFET; display devices; microwave integrated circuits; semiconductor thin films; thin film transistors; frequency 10 GHz; frequency 5.5 GHz; large-grain films; size 0.5 mum; sub-micron CMOS/MOS-bipolar hybrid TFT; system displays; Active matrix technology; CMOS technology; Crystallization; Delay effects; Liquid crystal displays; MOSFETs; Plasma displays; Probes; Scattering parameters; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419008
Filename :
4419008
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2604466
بازگشت