Title :
A new approach to improved green emitting II-VI laser diodes
Author :
Strassburg, M. ; Schulz, O. ; Pohl, U.W. ; Bimberg, D. ; Klude, M. ; Hommel, D. ; Itoh, S. ; Nakano, K. ; Ishibashi, A.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
The realisation of green semiconductor lasers is the key to new optoelectronic display systems. The ZnCdSSe-system has already proven its potential for laser diodes in the spectral range of 490-540 nm. To achieve commercially relevant lifetimes longer than 400 hours large improvements are however necessary. In this contribution we demonstrate lithium-containing contact structures for the p-side and implantation induced disordering (IID) defined index guiding leading to dramatically improved laser characteristics like largely reduced threshold current density.
Keywords :
II-VI semiconductors; cadmium compounds; current density; laser transitions; life testing; optical testing; semiconductor device testing; semiconductor lasers; zinc compounds; 490 to 540 nm; ZnCdSSe; ZnCdSSe-system; commercially relevant lifetimes; dramatically improved laser characteristics; green emitting II-VI laser diodes; green semiconductor lasers; index guiding; largely reduced threshold current density; laser diodes; lithium-containing contact structures; optoelectronic display systems; p-side; plantation induced disordering; spectral range; Current density; Diode lasers; Displays; Electrodes; Lithium; Optical refraction; Semiconductor lasers; TV; Threshold current; Zinc compounds;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882310
