AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate

Author

Asano, T. ; Tojyo, T. ; Yanashima, K. ; Takeya, M. ; Hino, T. ; Ikeda, S. ; Kijima, S. ; Ansai, S. ; Shibuya, K. ; Goto, S. ; Tomiya, S. ; Yabuki, Y. ; Aoki, T. ; Uchida, S. ; Ikeda, M.

Author_Institution

Dev. Center, Sony Shiroishi Semicond. Inc., Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

109

Lastpage

110

Abstract

The lifetime of AlGaInN-based violet laser diodes is restricted by the high dislocation densities caused by the large difference between the lattice constants and thermal expansion coefficients of GaN and sapphire. In order to reduce the dislocation density, epitaxial lateral overgrowth (ELO) techniques have been proposed, leading to the higher performance of AlGaInN lasers. In this work, we compared the lasing characteristics of AlGaInN lasers grown on ELO-GaN with those grown on sapphire substrates.

Keywords

III-V semiconductors; aluminium compounds; dislocation density; epitaxial growth; gallium compounds; indium compounds; lattice constants; life testing; optical fabrication; optical testing; semiconductor device testing; semiconductor lasers; substrates; AlGaInN; AlGaInN laser diodes; AlGaInN lasers; AlGaInN-based violet laser diode lifetime; ELO-GaN substrate; GaN; high dislocation densities; lattice constants; sapphire substrate; thermal expansion coefficients; Diode lasers; Gallium nitride; Lattices; Power generation; Power lasers; Rough surfaces; Substrates; Surface roughness; Thermal expansion; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882312

Filename

882312