1.3 /spl mu/m strained quantum well lasers on InGaAs ternary substrates with a low threshold current density (<80 A/cm/sup 2//well)

Author

Otsubo, K. ; Sekine, N. ; Nishijima, Y. ; Aoki, O. ; Kuramata, A. ; Ishikawa, Hiroshi

Author_Institution

FWCP Opt. Interconnection Fujitsu Lab., Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

111

Lastpage

112

Abstract

We have fabricated 1.3 /spl mu/m strained InGaAs-InAlGaAs quantum well lasers on InGaAs ternary substrates. A low J/N, of 74 A/cm/sup 2//well and high T/sub 0/ of 106 K were simultaneously obtained, in spite of poor surface morphology of the wafers. The T/sub 0/ increased when J/N was reduced, as we previously reported. The InGaAs substrates whose quality is the same as that of commercial InP and GaAs substrates should make 1.3 /spl mu/m lasers of much lower threshold and higher T/sub 0/ possible.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.3 mum; GaAs substrates; InGaAs; InGaAs substrates; InGaAs ternary substrates; InGaAs-InAlGaAs; low threshold current density; poor surface morphology; strained InGaAs-InAlGaAs quantum well lasers; strained quantum well lasers; Carrier confinement; Indium gallium arsenide; Laboratories; Optical interconnections; Potential well; Quantum well lasers; Substrates; Surface morphology; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882313

Filename

882313