Title :
Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz
Author :
Lai, R. ; Mei, X.B. ; Deal, W.R. ; Yoshida, W. ; Kim, Y.M. ; Liu, P.H. ; Lee, J. ; Uyeda, J. ; Radisic, V. ; Lange, M. ; Gaier, T. ; Samoska, L. ; Fung, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach
Abstract :
In this paper, we present the latest advancements of sub 50 nm InGaAs/lnAIAs/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385 GHz. This extrapolation is validated by the demonstration of a 3-stage common source low noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at 340 GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; extrapolation; gallium arsenide; high electron mobility transistors; indium compounds; submillimetre wave transistors; 3-stage common source low noise MMIC amplifier; HEMT device; InGaAs-InAlAs-InP; extrapolation; frequency 300 GHz; frequency 340 GHz; frequency 385 GHz; high electron mobility transistor; size 50 nm; Cutoff frequency; Electrical resistance measurement; Extrapolation; Gain; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Substrates; Thickness measurement;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419013
