Title :
Room-temperature operation of GaInAsN/GaAs laser diodes in the 1.5 /spl mu/m range
Author :
Fischer, M. ; Reinhardt, M. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
We report for the first time on operation of GaInAsN laser diodes at emission wavelengths >1.5 /spl mu/m, showing the potential of the material system GaInAsN as an active layer material for edge emitters and VCSELs in the 1.55 /spl mu/m optical fiber window. The SCH double quantum well laser structure was grown by solid source MBE on [001] oriented n-GaAs substrate. A radio frequency (RF) plasma source was used for supplying active nitrogen from N/sub 2/ gas. The active region - two 7.6 nm GaIn/sub 0.38/AsN/sub 0.05/ QWs separated by a 16 nm GaAs barrier - is symmetrically embedded in a 340 nm thick undoped GaAs waveguide.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; solid phase epitaxial growth; waveguide lasers; 1.5 mum; 16 nm; 25 C; 340 nm; 7.6 nm; GaAs; GaAs barrier; GaIn/sub 0.38/AsN/sub 0.05/; GaInAsN laser diodes; GaInAsN-GaAs; GaInAsN/GaAs laser diodes; N/sub 2/; N/sub 2/ gas; SCH double quantum well laser structure; VCSELs; [001] oriented n-GaAs substrate; active layer material; active nitrogen; active region; edge emitters; emission wavelengths; laser operation; material system; optical fiber window; radio frequency plasma source; room-temperature operation; solid source MBE; undoped GaAs waveguide; Diode lasers; Fiber lasers; Gallium arsenide; Gas lasers; Optical fibers; Optical materials; Quantum well lasers; Radio frequency; Solid lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882315
