Title :
0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications
Author :
Chou, Y.C. ; Lange, M.D. ; Bennett, B.R. ; Boos, J.B. ; Yang, J.M. ; Papanicolaou, N.A. ; Lin, C.H. ; Lee, L.J. ; Nam, P.S. ; Gutierrez, A.L. ; Farkas, D.S. ; Tsai, R.S. ; Wojtowicz, M. ; Chin, T.P. ; Oki, A.K.
Author_Institution :
Northrop Grumman Corp., Redondo Beach
Abstract :
A 0.1 μm In02Al08Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In02Al08Sb layer was utilized to replace the upper AlSb layer in the conventional AlSb-InAs HEMT in order to mitigate the oxidation incurred by the AlSb layer. In this work, we have demonstrated excellent dc and rf performance on both devices and low-noise amplifiers (LNAs) using 0.1 μm In02Al08Sb-InAs HEMTs on 3-inch GaAs substrates. This accomplishment is crucial for phased-array applications with ultralow-power and oxidation-free requirements.
Keywords :
HEMT integrated circuits; MMIC amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; low-power electronics; oxidation; GaAs; HEMT MMIC technology; HEMT low-noise amplifiers; InAlSb-InAs; LNA; oxidation-free requirements; phased-array applications; size 0.1 μm; size 3 inch; ultralow-power applications; Electron mobility; Gallium arsenide; HEMTs; Low-noise amplifiers; Molecular beam epitaxial growth; Oxidation; Sheet materials; Space technology; Substrates; Tellurium;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419015
