Hole confinement in strain-compensated-SQW (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasers

Author

Susaki, W. ; Kondo, K. ; Yaku, H. ; Asano, H. ; Fukunaga, T. ; Hayakawa, T.

Author_Institution

Osaka Electro-Commun. Univ., Neyagawa, Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

119

Lastpage

120

Abstract

The hole confinement at threshold on indium content in strain-compensated (In/sub x/Ga/sub 1-x/As/GaAs/sub 0.2/P/sub 0.8/)/GaAs SQW lasers is investigated by rate equation analysis of the lasing delay time. It is shown that the temperature insensitive threshold current in these lasers is due to complete hole confinement in HH (heavy hole) band due to larger energy difference between HH and LH (light hole) bands by the excellent strain-compensated configuration. The spontaneous recombination lifetime increases with x. A temperature insensitive lifetime (8.5 ns) is observed between 20 and 8/spl deg/C for x=0.3.

Keywords

III-V semiconductors; carrier density; carrier relaxation time; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; (In/sub x/Ga/sub 1-x/As/GaAs/sub 0.2/P/sub 0.8/)/GaAs lasers; (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasers; 20 to 80 C; 8.5 ns; InGaAs-GaAsP-GaAs; energy difference; heavy hole band; hole confinement; lasing delay time; light hole bands; rate equation analysis; spontaneous recombination lifetime; strain-compensated configuration; strain-compensated single quantum well laser; temperature insensitive lifetime; temperature insensitive threshold current; Charge carrier density; Delay effects; Equations; Fiber lasers; Gallium arsenide; Pump lasers; Quantum well lasers; Radiative recombination; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882317

Filename

882317