Title :
High Mobility III-V MOSFETs For RF and Digital Applications
Author :
Passlack, M. ; Zurcher, P. ; Rajagopalan, K. ; Droopad, R. ; Abrokwah, J. ; Tutt, M. ; Park, Y.-B. ; Johnson, E. ; Hartin, O. ; Zlotnicka, A. ; Fejes, P. ; Hill, R.J.W. ; Moran, D.A.J. ; Li, X. ; Zhou, H. ; Macintyre, D. ; Thoms, S. ; Asenov, A. ; Kalna,
Author_Institution :
Freescale Semicond., Inc., Tempe
Abstract :
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/ Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially suitable for RF power amplification, switching, and front-end integration in mobile and wireless applications while MOSFETs with high indium content channels are of interest for future CMOS applications.
Keywords :
III-V semiconductors; MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; molecular beam epitaxial growth; GaAs; GdGaO-Ga2O3; MOSFET; RF power amplification; high mobility channels; molecular beam epitaxial growth; Dielectric devices; Fabrication; Gallium arsenide; III-V semiconductor materials; Indium; MOSFETs; Manufacturing; Molecular beam epitaxial growth; Radio frequency; Solids;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419016
