Title :
High gain and low polarization dependent 1.55-/spl mu/m semiconductor optical amplifier with a spot-size converter
Author :
Tohmori, Y. ; Ito, T. ; Magari, K. ; Kawaguchi, Y. ; Kadota, Y. ; Kamioka, H. ; Oohashi, H. ; Suzuki, Y.
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
Abstract :
We have designed and fabricated a polarization independent spot-size convertor-semiconductor optical amplifier (SS-SOA) using a wide rectangular waveguide for ease of fabrication. The polarization dependence of the gain in the active region and that of the coupling efficiency in the SS regions on both sides of the device are compensated together by using a separate-confinement heterostructure (SCH) layer in the active region. The SS-SOA exhibits high-performance characteristics, such as low polarization dependence, high gain, efficient coupling to fiber, and uniform far-field-patterns.
Keywords :
MOCVD; laser beams; optical design techniques; optical fabrication; optical planar waveguides; optical wavelength conversion; rectangular waveguides; semiconductor optical amplifiers; vapour phase epitaxial growth; SS-SOA; active region; coupling efficiency; design; efficient coupling; fabrication; gain; high gain; high gain dependence; high-performance characteristics; low polarization dependence; polarization dependence; polarization independence; semiconductor optical amplifier; separate-confinement heterostructure layer; spot-size converter; spot-size convertor-semiconductor optical amplifier; uniform far-field-patterns; wide rectangular waveguide; Converters; Optical amplifiers; Optical design; Optical device fabrication; Optical polarization; Optical waveguides; Rectangular waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882319
