Reliability Study of an N-Channel Silicon Gate FET with Field Shield

A reliability study was performed on an N-channel FET with a self-aligned gate and a field shield. It was found that the field shield was very successful in reducing leakage and did not add significantly to the failure rate of the structure, It was further found that in terms of dielectric shorts and VT stability, the silicon gate structure was as good as or better than comparable metal-gate devices.