• DocumentCode
    2604609
  • Title

    Reliability Study of an N-Channel Silicon Gate FET with Field Shield

  • Author

    Anolick, E.S. ; Prosser, J.F. ; Remis, B.R.

  • Author_Institution
    IBM System Products Division, East Fishkill Facility, Hopewell Junction, New York 12533
  • fYear
    1974
  • fDate
    27120
  • Firstpage
    70
  • Lastpage
    73
  • Abstract
    A reliability study was performed on an N-channel FET with a self-aligned gate and a field shield. It was found that the field shield was very successful in reducing leakage and did not add significantly to the failure rate of the structure, It was further found that in terms of dielectric shorts and VT stability, the silicon gate structure was as good as or better than comparable metal-gate devices.
  • Keywords
    Dielectric devices; Electrodes; Electron devices; FETs; Leakage current; Silicon; Stability; Stress; Testing; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1974. 12th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1974.362629
  • Filename
    4208007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2604609