• DocumentCode
    2604618
  • Title

    High-performance continuous wave type-II interband cascade lasers

  • Author

    Yang, R.Q. ; Bradshaw, J.L. ; Bruno, J.D. ; Pham, J.T. ; Wortman, D.E.

  • Author_Institution
    US Army Res. Lab., Adelphi, MD, USA
  • fYear
    2000
  • fDate
    25-28 Sept. 2000
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    Interband cascade (IC) lasers that utilize optical transitions between the conduction and valence bands in staircase of Sb-based type-II quantum wells (QWs) represent a new class of mid-infrared (IR) diode lasers. IC lasers reuse injected electrons by taking advantage of the broken gap alignment in Sb-based type-II QWs to form cascade stages, leading to a quantum efficiency greater than the conventional limit of unity, similar to the intersubband quantum cascade (QC) laser. Furthermore, IC laser designs can circumvent the fast phonon scattering loss in intersubband QC lasers and suppress Auger recombination through band-structure engineering, leading to lower threshold currents and more efficient operation. Significant advances in the development of type-II IC lasers (/spl lambda//spl sim/3.9 /spl mu/m) were made recently by us at ARL in terms of record-high differential external quantum efficiency (DEQE) (/spl sim/500%), peak output power (>4 W/facet), peak power conversion (wall-plug) efficiency (/spl sim/7%), and reproducibility. We report our most recent progress in achieving high-performance mid-infrared (/spl sim/3.7 /spl mu/m) type-II IC lasers under continuous-wave conditions.
  • Keywords
    laser beams; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; 3.7 mum; 3.9 mum; 500 percent; 7 percent; Auger recombination; Sb-based type-II quantum well staircase; Sb-based type-II quantum wells; band-structure engineering; broken gap alignment; cascade stages; conduction bands; continuous-wave conditions; differential external quantum efficiency; efficient operation; fast phonon scattering loss; high-performance continuous wave type-II interband cascade lasers; high-performance mid-infrared lasers; injected electrons; interband cascade lasers; interband laser designs; intersubband quantum cascade laser; mid-infrared diode lasers; optical transitions; peak output power; peak power conversion efficincy; quantum efficiency; reproducibility; threshold currents; type-II interband cascade lasers; valence bands; wall-plug efficiency; Diode lasers; Electron optics; Laser transitions; Optical design; Optical scattering; Particle scattering; Phonons; Photonic integrated circuits; Quantum cascade lasers; Quantum well lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-6259-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2000.882320
  • Filename
    882320