• DocumentCode
    2604620
  • Title

    Effect of process variation on field emission characteristic in surface conduction electron-emitters

  • Author

    Lo, Hsiang-Yu ; Li, Yiming ; Chao, Hsueh-Yung ; Tsai, Chih-Hao ; Pan, Fu-Ming

  • Author_Institution
    Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2007
  • fDate
    2-5 Aug. 2007
  • Firstpage
    353
  • Lastpage
    356
  • Abstract
    In this work, we explore the effect of process variation on field emission characteristics in surface conduction electron-emitters. The structure of palladium thin-film emitter is fabricated on the substrate and the nanometer scaled gap is formed by the focused ion beam (FIB) technique. Different shapes of nanogaps due to the process variations are investigated by the experiment and 3D Maxwell particle-in-cell simulation. Four deformation structures are examined, and it is found that the Type 1 exhibits high emission efficiency due to a stronger electric field around the apex and larger the emission current among structures. The electron emission current is dependent upon the angle of inclination of surface.
  • Keywords
    Maxwell equations; deformation; electrodes; electron field emission; focused ion beam technology; metallic thin films; nanotechnology; palladium; surface conductivity; 3D Maxwell particle-in-cell simulation; Pd; deformation structures; deformed palladium nanogaps; electron emission current; emission efficiency; field emission characteristics; focused ion beam technique; palladium thin-film emitter structure; process variation effect; surface conduction electron-emitters; Electrodes; Electron emission; Electron guns; Fabrication; Finite difference methods; Ion beams; Palladium; Substrates; Surface morphology; Transistors; focused ion beam; palladium; particle-in-cell simulation; process variation; surface conduction electron emitter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-0607-4
  • Electronic_ISBN
    978-1-4244-0608-1
  • Type

    conf

  • DOI
    10.1109/NANO.2007.4601207
  • Filename
    4601207