High power quantum dot lasers at 1140 nm

We demonstrate quantum dot lasers at 1140 nm with record high optical output power of 5 W. The use of novel tunneling barriers allows us to improve the characteristic temperature, T/sub 0/. A detailed investigation is presented of the impact of barrier design on the characteristic temperature for QD lasers. The quantum dot lasers were grown by low-pressure Metalorganic Chemical Vapor Phase Deposition (MOCVD). The active layer consists of stacks of InGaAs quantum dots in a GaAs matrix. Ridge waveguide lasers with 200 /spl mu/m stripe-width exhibit a total optical output power up to 5 W in pulsed operation at room temperature.