• DocumentCode
    2604667
  • Title

    Nichrome Resistors in Programmable Read Only Memory Integrated Circuits

  • Author

    Eisenberg, P.H. ; Nolser, R.

  • Author_Institution
    Litton G/CSD, 5500 Canoga Av., Woodland Hills, Ca 91364
  • fYear
    1974
  • fDate
    27120
  • Firstpage
    87
  • Lastpage
    87
  • Abstract
    Computer designers whose-goals required rapid programming of semiconductor read only memories have utilized large quantities of PROMS (programmable read only memories). The most popular of these types of integrated circuit is programmed by raising the resistance of a nichrome resistor above a threshold value required to change the PROM output logic level. A study was made to determine the mechanisms associated with the problems of (1) hard to program resistors, (2) changes in output logic levels for resistors not programmed, and (3) resistors whose resistance drops after programming and causes a change in output level for the bit it reresents (reappearing bit or growback).
  • Keywords
    Electron beams; Etching; Fuses; Glass; Logic circuits; Logic programming; PROM; Read only memory; Resistors; Scanning electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1974. 12th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1974.362632
  • Filename
    4208010