DocumentCode
2604667
Title
Nichrome Resistors in Programmable Read Only Memory Integrated Circuits
Author
Eisenberg, P.H. ; Nolser, R.
Author_Institution
Litton G/CSD, 5500 Canoga Av., Woodland Hills, Ca 91364
fYear
1974
fDate
27120
Firstpage
87
Lastpage
87
Abstract
Computer designers whose-goals required rapid programming of semiconductor read only memories have utilized large quantities of PROMS (programmable read only memories). The most popular of these types of integrated circuit is programmed by raising the resistance of a nichrome resistor above a threshold value required to change the PROM output logic level. A study was made to determine the mechanisms associated with the problems of (1) hard to program resistors, (2) changes in output logic levels for resistors not programmed, and (3) resistors whose resistance drops after programming and causes a change in output level for the bit it reresents (reappearing bit or growback).
Keywords
Electron beams; Etching; Fuses; Glass; Logic circuits; Logic programming; PROM; Read only memory; Resistors; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1974.362632
Filename
4208010
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