Modal gain and T/sub 0/ value improvements in quantum dot lasers using dots-in-a-well (DWELL) structure

Author

Liu, G.T. ; Li, H. ; Stintz, A. ; Newell, T.C. ; Lester, L.F. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

133

Lastpage

134

Abstract

The issues necessary to achieve high ground state modal gain and high T/sub 0/ value are addressed. It is found that the modal gain and the T/sub 0/ value can be increased simultaneously. Three different ways to improve the modal gain and T/sub 0/ value are discussed. Additionally, it is pointed out that the low threshold current density of QD lasers, is due primarily to "physical scaling" rather than any quantum effect. The performance tradeoffs occur between the threshold current density and the ground state modal gain and T/sub 0/ value. QD lasers with InAs/In/sub x/Ga/sub 1-x/As dots-in-a-well (DWELL) structure are used.

Keywords

III-V semiconductors; current density; gallium arsenide; ground states; indium compounds; laser beams; quantum well lasers; semiconductor quantum dots; DWELL structure; InAs-InGaAs; InAs/In/sub x/Ga/sub 1-x/As dots-in-a-well structure; T/sub 0/ value; T/sub 0/ value improvements; dots-in-a-well structure; ground state modal gain; low threshold current density; modal gain; performance tradeoffs; physical scaling; quantum dot lasers; quantum effect; threshold current density; Laser theory; Optical materials; Optical saturation; Quantum dot lasers; Quantum well lasers; Stationary state; Temperature; Threshold current; Tunable circuits and devices; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882323

Filename

882323